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| DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC1658G LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER DESCRIPTION The PC1658G is a silicon monolithic integrated circuit designed as amplifier for high frequency system applications. Bandwidth and output power level can be determined according to external resistor constants of negative feedback and final stage collector. This IC is available in 8-pin plastic SOP. This IC is manufactured using NEC's 10 GHz fT NESATTM II silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES * Low noise figure resistance constants. : GP 40 dB @ Without negative feedback resistor : GP 18 dB @ With negative feedback resistor * Wideband response : f3dB = 1.0 GHz @ GP = 18 dB * External resistor can vary the collector current of the final transistor in the IC to adjust the saturated output level. : NF 3 dB * Due to the external negative feedback circuit, the power gain can be adjustable by selecting appropriate APPLICATIONS * IF buffer amplifier of high frequency system * Measurement equipment ORDERING INFORMATION Part Number Package 8-pin plastic SOP (225 mil) Marking 1658 Supplying Form Embossed tape 12 mm wide. 1 pin is tape pull-out direction. Qty 2.5 kp/reel. PC1658G-E1 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: PC1658G) Caution TO-99 CAN package (PC1658A) and 8-pin plastic DIP package (PC1658C) products are discontinued. Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P11120EJ3V0DS00 (3rd edition) Date Published September 1999 N CP(K) Printed in Japan The mark shows major revised points. (c) 1996, 1999 PC1658G PIN CONNECTIONS (Top View) 8 7 6 5 Pin No. 1 2 3 4 5 6 Pin Name GND Test Point Output VCC Test Point Input Bypass Bypass 1 2 3 4 7 8 PIN EXPLANATION Pin No. 1 Pin Name GND Function and Applications Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Test Point pin. The collector current of Q2 and Q3 can be varied by connecting an appropriate external resistance between this pin and GND or by shorting this pin to GND. By increasing the collector current of Q3, the output level improves and the IC can operate as a lowdistortion amplifier. Signal output pin. This pin must be coupled to signal source with capacitor for DC cut. Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. By connecting this pin to the power supply through an appropriate external resistance or by shorting this pin directly to the power supply, the gain can be adjustable (when using pin 2, short the pin 5 to the power supply). Signal input pin. Through negative feedback from output pin with an external circuit, the IC operates as a wideband amplifier. Emitter bypass pins of Q1. Bypass these pins to GND with a capacitor. Input 6 Bypass 7 Bypass 8 R2 R5 R6 R8 1 GND Q1 Internal Equivalent Circuit 2 Test Point 4 VCC R3 R1 R4 Q2 Q3 3 Output R7 2 Test point 5 Test point 3 Output 4 VCC 5 Test Point 6 Input 7 8 Bypass 2 Data Sheet P11120EJ3V0DS00 PC1658G ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Output Transistor Current Power Dissipation Symbol VCC IQ3 PD TA = +25 C TA = +25 C Mounted on double copper clad 50 x 50 x 1.6 mm epoxy glass PWB (TA = +70 C) Conditions Rating 12 40 280 Unit V mA mW Operating Ambient Temperature Storage Temperature TA Tstg -40 to +75 -55 to +150 C C ELECTRICAL CHARACTERISTICS (TA = +25 C, VCC = 10.0 V, ZS = ZL = 50 , Test circuit 1) Parameter Circuit Current Power Gain 1 Power Gain 2 Power Gain 3 Noise Figure 1 Noise Figure 2 Symbol ICC GP1 GP2 GP3 NF1 NF2 No signal f = 10 MHz f = 100 MHz f = 500 MHz f = 100 MHz f = 500 MHz Conditions MIN. 9 37 28 14 - - TYP. - 41 31 17 1.5 2.0 MAX. 18 45 34 20 2.5 3.0 Unit mA dB dB dB dB dB TEST SET-UP Power Supply 0.01 F Signal Generator INPUT Test Circuit 1 to 3 Spectrum Analyzer or Network Analyzer OUTPUT ZS = 50 ZL = 50 Data Sheet P11120EJ3V0DS00 3 PC1658G TEST CIRCUITS TEST CIRCUIT 1 (Low-noise amplifier) Input 0.1 F 8 7 6 0.01 F 5 1 2 3 4 0.01 F VCC 0.01 F Output TEST CIRCUIT 2 (Wideband low-noise amplifier) Input 0.1 F 8 7 6 0.01 F 5 RF 1 2 3 4 0.01 F VCC 0.01 F 0.01 F Output TEST CIRCUIT 3 (Wideband low-noise amplifier with improved output level) Input 0.1 F 8 7 6 0.01 F 5 220 1 180 2 3 4 0.01 F 0.01 F VCC 0.01 F Output 4 Data Sheet P11120EJ3V0DS00 PC1658G ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD 1 PC1658G C4 R1 GND C3 OUT VCC C1 C2 IN Notes 1. 50 x 50 x 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. COMPONENT LIST Value C1 to C3 C4 R1 0.01 F 0.1 F Open Note : Through holes Remarks Necessary to all the test circuits In the case of Low-noise Amplifier In the case of Wideband Low-noise Amplifier with improved output level 180 Note In the case of Low-noise Amplifier, R1 is not mounted. Data Sheet P11120EJ3V0DS00 5 PC1658G TYPICAL CHARACTERISTICS (TA = +25 C, unless otherwise specified) POWER DISSIPATION vs. OPERATING AMBIENT TEMPERATURE 800 50 CIRCUIT CURRENT vs. SUPPLY VOLTAGE Power Dissipation PD (mW) 600 Circuit Current ICC (mA) 40 Test circuit 3 30 400 20 200 10 Test circuit 1 and 2 0 -50 0 0 +50 +100 +150 Operating Ambient Temperature TA (C) 2 4 6 8 10 Supply Voltage VCC (V) 12 INSERTION POWER GAIN AND NOISE FIGURE vs. FREQUENCY INSERTION POWER GAIN vs. FREQUENCY 50 RF = Insertion Power Gain GP (dB) 40 Noise Figure NF (dB) VCC = 10 V Test Circuit 2 50 Insertion Power Gain GP (dB) VCC = 10 V Test Circuit 1 40 GP 30 10 20 8 6 10 NF 0 10 4 2 0 30 RF = 470 20 RF = 220 10 20 50 100 200 500 1 000 Frequency f (MHz) 0 10 20 50 100 200 500 1 000 2 000 Frequency f (MHz) NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY Output Power of Each Tone PO (each) (dBm) Third Order Intermodulation Distortion IM3 (dBm) 25 Test Circuit 3 Noise Figure NF (dB) Insertion Power Gain GP (dB) 20 VCC = 6 V 15 VCC = 4 V 10 VCC = 4 V 5 NF VCC = 8 V 0 10 20 50 100 200 500 1 000 2 000 Frequency f (MHz) VCC = 6 V GP VCC = 8 V +40 OUTPUT POWER OF EACH TONE AND THIRD ORDER INTERMODULATION DISTORTION vs. INPUT POWER OF EACH TONE VCC = 8 V Test Circuit 3 f1 = 500 MHz +20 f2 = 501 MHz 0 -20 -40 -60 -80 -100 -60 VCC = 8 V VCC = 6 V PO (each) VCC = 4 V IM3 VCC = 6 V VCC = 4 V +10 -50 -40 -30 -20 -10 0 Input Power of Each Tone Pin (each) (dBm) 6 Data Sheet P11120EJ3V0DS00 PC1658G PACKAGE DIMENSIONS 8 PIN PLASTIC SOP (225 mil) (Unit: mm) 8 5 detail of lead end P 1 A 4 H F G I J S B E D NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. L K N S C M M ITEM A B C D E F G H I J K L M N P MILLIMETERS 5.20.2 0.85 MAX. 1.27 (T.P.) 0.42 +0.08 -0.07 0.10.1 1.570.2 1.49 6.50.3 4.40.15 1.10.2 0.17 +0.08 -0.07 0.60.2 0.12 0.10 +7 3 -3 Data Sheet P11120EJ3V0DS00 7 PC1658G NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) Because the components will operate at high frequencies, apply chip capacitors and chip resistors with low parasitic inductance. (4) The DC capacitor must be attached to input pin and output pin. (5) The bypass capacitor should be attached to VCC line. (6) In case of improved output level type application circuit, observe precaution not to exceed the power dissipation rating, especially in VCC = 9 V or over. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235 C or below Time: 30 seconds or less (at 210 C) Note Count: 3, Exposure limit: None Package peak temperature: 215 C or below Time: 40 seconds or less (at 200 C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260 C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300 C Time: 3 seconds or less (per side of device) Note Exposure limit: None Recommended Condition Symbol IR35-00-3 VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating - Note After opening the dry pack, keep it in a place below 25 C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 8 Data Sheet P11120EJ3V0DS00 PC1658G [MEMO] Data Sheet P11120EJ3V0DS00 9 PC1658G [MEMO] 10 Data Sheet P11120EJ3V0DS00 PC1658G [MEMO] Data Sheet P11120EJ3V0DS00 11 PC1658G NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
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